EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
Automotive | Yes |
PPAP | Unknown |
Product Category | Power MOSFET |
Configuration | Single |
Process Technology | CoolMOS |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 650 |
Maximum Gate Source Voltage (V) | 20 |
Maximum Gate Threshold Voltage (V) | 4.5 |
Maximum Continuous Drain Current (A) | 31.2 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1.5 |
Maximum Drain Source Resistance (MOhm) | 110@10V |
Typical Gate Charge @ Vgs (nC) | 118@10V |
Typical Gate Charge @ 10V (nC) | 118 |
Typical Input Capacitance @ Vds (pF) | 3240@100V |
Maximum Power Dissipation (mW) | 277800 |
Typical Fall Time (ns) | 6 |
Typical Rise Time (ns) | 11 |
Typical Turn-Off Delay Time (ns) | 68 |
Typical Turn-On Delay Time (ns) | 16 |
Minimum Operating Temperature (°C) | -40 |
Maximum Operating Temperature (°C) | 150 |
Supplier Temperature Grade | Automotive |
Packaging | Tube |
Supplier Package | TO-220 |
Pin Count | 3 |
Standard Package Name | TO-220 |
Mounting | Through Hole |
Package Height | 9.45(Max) |
Package Length | 10.36(Max) |
Package Width | 4.57(Max) |
PCB changed | 3 |
Tab | Tab |
Lead Shape | Through Hole |
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